METHOD FOR FORMING RADIO FREQUENCY DEVICE
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United States of America Patent
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Issued Date -
Dec 4, 2014
app pub date -
Jan 16, 2014
filing date -
May 28, 2013
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Abandoned
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Abstract
A method for forming a radio frequency device is provided. The method may include: providing a semiconductor-on-insulator layer, which comprises a back substrate, a buried oxide layer and a top semiconductor layer, where a plurality of transistors and an interlayer dielectric layer covering the plurality of transistors are formed on a surface of the top semiconductor layer; providing a temporary supporting layer having a smooth surface, and adhering a surface of the interlayer dielectric layer to the temporary supporting layer; removing the back substrate to expose the buried oxide; providing a high resistivity substrate, and adhering the high resistivity substrate to the buried oxide layer; and removing the temporary supporting layer to expose the surface of the interlayer dielectric layer after the high resistivity substrate and the buried oxide layer is adhered. Signal loss of the radio frequency devices may be reduced, and signal linearity is improved.
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