LIGHT EMITTING DIODE
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United States of America Patent
Stats
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N/A
Issued Date -
Dec 4, 2014
app pub date -
May 28, 2014
filing date -
May 28, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
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US Family Size
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Non-US Coverage
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Abstract
Embodiments of the invention provide a gallium nitride-based light emitting diode including a transparent electrode, which includes a metal layer and a metal oxide layer. The light emitting diode includes a substrate, an n-type gallium nitride-based semiconductor layer disposed on the substrate, a p-type gallium nitride-based semiconductor layer disposed on the n-type gallium nitride-based semiconductor layer, an active layer interposed between the n-type gallium nitride-based semiconductor layer and the p-type gallium nitride-based semiconductor layer, and a transparent electrode disposed on the p-type gallium nitride-based semiconductor layer. Here, the transparent electrode has a multilayer structure including a first metal layer and a metal oxide layer sequentially stacked one above another, and impedance of the metal oxide layer matches impedance of an external environment at an interface between the metal oxide layer and the external environment.
First Claim
Other Claims data not available
Family
| Country | kind | publication No. | Filing Date |
|---|---|---|---|
| KR | A | KR20140140166 | May 28, 2013 |
International Classification(s)
- 2014 Application Filing Year
- H01L Class
- 23828 Applications Filed
- 21803 Patents Issued To-Date
- 91.51 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 9 Citation Count
- H01L Class
- 7.09 % this patent is cited more than
- 11 Age