Wide band gap semiconductor wafers grown and processed in a microgravity environment and method of production
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 26, 2015
Grant Date -
Dec 4, 2014
app pub date -
May 29, 2013
filing date -
May 29, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed onto stackable containment systems that create an appropriate gap between each wafer to allow for homogeneous heating and processing. The resulting wide band gap semiconductors have unique molecular structures not attainable when wide band gap semiconductors with the identical chemical composition are produced in a standard 1 gravity environment.
First Claim
Other Claims data not available
Family
International Classification(s)
- 2013 Application Filing Year
- H01L Class
- 22267 Applications Filed
- 20713 Patents Issued To-Date
- 93.03 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 10.46 % this patent is cited more than
- 10 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Nov 26, 2026 |
