Organic Thin Film Transistors And Method of Making Them
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United States of America Patent
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Issued Date -
Dec 4, 2014
app pub date -
Oct 29, 2012
filing date -
Nov 3, 2011
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Abandoned
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Abstract
An organic thin film transistor comprises source and drain electrodes defining a channel between them; a surface-modification layer on at least part of the surface of each of the source and drain electrodes; an organic semiconductor layer extending across the channel and in contact with the surface-modification layers; a gate electrode; and a gate dielectric between the organic semiconductor layer and the gate dielectric. The surface-modification layers consist essentially of a partially fluorinated fullerene.
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