METHOD AND SYSTEM FOR FORMING HIGH ACCURACY PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY
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United States of America Patent
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Issued Date -
Dec 4, 2014
app pub date -
Aug 7, 2014
filing date -
Sep 1, 2008
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Abandoned
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Abstract
A method and system for fracturing or mask data preparation for charged particle beam lithography are disclosed in which a plurality of charged particle beam shots is determined that will form a pattern on a surface using a multi-beam charged particle beam writer, where the sensitivity of the pattern on the surface to manufacturing variation is reduced by increasing edge slope.
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