Edge Counter-Doped Solar Cell With Low Breakdown Voltage
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United States of America Patent
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Issued Date -
Dec 4, 2014
app pub date -
May 29, 2013
filing date -
May 29, 2013
priority date (Note) -
Abandoned
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Abstract
A solar cell having a large region where reverse breakdown can occur is disclosed. Reverse breakdown tends to occur near areas where heavily doped n-type regions abut heavily doped p-type regions. Thus, by increasing the region where such a heavily doped p/n junction exists may improve the reverse breakdown characteristics of the solar cell. In addition, a method of making such solar cell is disclosed, where this heavily doped p/n junction is fabricated along at least a portion of the perimeter of the solar cell.
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