DRY ETCHING METHOD, DRY ETCHING APPARATUS, METAL FILM, AND DEVICE INCLUDING THE METAL FILM
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United States of America Patent
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Issued Date -
Dec 4, 2014
app pub date -
May 29, 2014
filing date -
May 31, 2013
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Abstract
In a dry etching method for etching a metal film formed on a substrate by use of etching gas containing β-diketone, the metal film contains at least one metal material that forms a penta- or hexa-coordinated complex structure with β-diketone; the etching gas containing β-diketone contains at least one additive among H2O or H2O2; and the additive is contained at a volume concentration of 1% or greater and 20% or less.
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