METHOD FOR GROWING ß-Ga2O3 SINGLE CRYSTAL
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Dec 4, 2014
app pub date -
Nov 12, 2012
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Nov 15, 2011
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Abstract
A method for growing a β-Ga2O3 single crystal, which is capable of effectively suppressing twinning of the using an Edge-defined film-fed growth (EFG) method, includes: a seed crystal brought into contact with a Ga2O3 melt; and the seed crystal is pulled and a β-Ga2O3 single crystal is grown without performing a necking process. In the method for growing a β-Ga2O3 single crystal, the widths of the β-Ga2O3 single crystal are 110% or less of the widths of the seed crystal in all directions.
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