SELECTIVE DEPOSITION OF SILVER FOR NON-VOLATILE MEMORY DEVICE FABRICATION
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United States of America Patent
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Issued Date -
Nov 27, 2014
app pub date -
Aug 8, 2014
filing date -
Sep 29, 2010
priority date (Note) -
Abandoned
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Abstract
A method of forming a non-volatile memory device includes providing a semiconductor substrate having a surface region, thereafter forming a first dielectric layer overlying, thereafter forming a first wiring material, thereafter forming amorphous silicon layer, and patterning and etching these layers to form first structures extending in a first direction and having a switching element. Thereafter, a method may include depositing a second dielectric layer overlying the first structures and having a dielectric surface region, forming an opening region in the second dielectric material to exposing part of the switching element, and depositing a silver material in the opening region, but not on the dielectric surface region.
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