METHOD FOR FABRICATING TRENCH TYPE POWER SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Nov 20, 2014
app pub date -
Jun 20, 2013
filing date -
May 14, 2013
priority date (Note) -
Abandoned
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Abstract
A method of forming a trench type semiconductor power device is disclosed. An epitaxial layer is formed on a substrate. A gate trench is formed in the epitaxial layer. A gate oxide layer and a trench gate are formed in the gate trench. A source region is then formed in the epitaxial layer. A dielectric layer is then deposited in a blanket manner. A contact hole is then formed in the dielectric layer and the epitaxial layer. A base ion implantation is then carried out to form at least one doping region in the epitaxial layer through the contact hole. A contact hole implantation process is then performed to form a contact doping region at the bottom of the contact hole.
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