IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Nov 20, 2014
app pub date -
Dec 24, 2012
filing date -
Dec 30, 2011
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Abandoned
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Abstract
The present invention provides an image sensor and a method of fabricating the same. The image sensor comprises a semiconductor substrate, a photosensitive component, and a pixel-readout circuit, characterized in that, the semiconductor substrate comprises a supporting substrate, a first insulating buried layer, a first semiconductor layer, a second insulating buried layer, and a second semiconductor layer covered on the semiconductor substrate in sequence; the first semiconductor layer and the second semiconductor layer have different thicknesses, such that the photosensitive component is in the thicker semiconductor layer, and the pixel-readout circuit is in the thinner semiconductor layer. To realize the image sensor mentioned above, two different methods are provided. Ion implantation and bonding method are used respectively to provide the first and second insulating buried layers, and the first and second semiconductor layer substrates, and then the image sensor is fabricated. The image sensor in the present invention has a well anti-radiation character and a well semiconductor character, and a photosensitive zone that has higher light absorption rate.
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