NITRIDE-BASED LIGHT-EMITTING ELEMENT COMPRISING A CARBON-DOPED P-TYPE NITRIDE LAYER
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Nov 20, 2014
app pub date -
Dec 27, 2012
filing date -
Dec 30, 2011
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The present invention relates to a nitride-semiconductor light-emitting element in which a p-type nitride layer is doped with carbon, and to a production method therefor. More specifically, the present invention relates to a nitride-semiconductor light-emitting element comprising a p-type nitride layer formed from a nitride having a high concentration of free holes as the carbon is auto-doped in accordance with adjustment of the rate of flow of a nitrogen source. The nitride-semiconductor light-emitting element of the present invention can provide a high free-hole concentration, which is difficult to achieve with conventional single p-type dopants, and can therefore lower the resistance and increase the light efficiency of the light-emitting element.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully