METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Nov 13, 2014
app pub date -
Sep 21, 2012
filing date -
Sep 30, 2011
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Abandoned
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Abstract
A method of manufacturing a semiconductor device includes: a groove portion formation step of forming a groove portion in a base; a barrier layer formation step of forming a barrier layer that covers at least an inner wall surface of the groove portion; a seed layer formation step of forming a seed layer that covers the barrier layer; and a burial step of burying a conductive material in an inside region of the seed layer, wherein the seed layer is made of Cu, and the conductive material is made of Cu.
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