MEMRISTOR BASED ON A MIXED METAL OXIDE
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United States of America Patent
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Issued Date -
Nov 13, 2014
app pub date -
Nov 2, 2012
filing date -
Nov 14, 2011
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Abandoned
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Abstract
The present invention relates to micro- and nano-electronics devices based on non-conventional materials. Such memristor devices with stable and reproducible characteristics can be used in the production of computer systems based on the analog architecture of artificial neural networks. The device in question consists of an active layer situated between two current conducting layers with which it is in electrical contact, said active layer being an ABOx-type oxide, where element B is titanium or zirconium or hafuium, and element A is a trivalent metal with an ion radius equal to 0.7-1.2 of the ion radius of titanium or zirconium or hafuium. If element B is titanium, then element A is selected from aluminium or scandium; if element B is zirconium or hafuium, then element A is selected from scandium or yttrium or luteciurn. The technical result of the proposed invention is an increase in the stability and reproducibility of the switching voltage and of the resistance in low and high impedance states.
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