CZTS-BASED COMPOUND SEMICONDUCTOR AND PHOTOELECTRIC CONVERSION DEVICE
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United States of America Patent
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Issued Date -
Nov 13, 2014
app pub date -
Nov 30, 2012
filing date -
Dec 28, 2011
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Abandoned
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Abstract
A main object of the present invention is to provide a CZTS-based compound semiconductor whose band gap is different from that of a conventional CZTS-based compound semiconductor and a photoelectric conversion device prepared with the CZTS-based compound semiconductor. The present invention is a CZTS-based compound semiconductor in which a ratio of the number of moles of Cu to the total number of moles of Cu, Zn and Sn is larger than a ratio of the number of moles of Cu to the total number of moles of Cu, Zn and Sn configuring Cu2ZnSnS4, and a photoelectric conversion device prepared with the CZTS-based compound semiconductor.
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