APPARATUS FOR GROWING INGOT AND METHOD OF GROWING INGOT
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United States of America Patent
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Issued Date -
Nov 13, 2014
app pub date -
Nov 28, 2012
filing date -
Nov 29, 2011
priority date (Note) -
Abandoned
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Abstract
Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit. Therefore, dislocation propagation velocity may be decreased and a propagation length may be shortened.
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