SEMICONDUCTOR STRUCTURE FOR ELECTROMAGNETIC INDUCTION SENSING AND A METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Nov 6, 2014
app pub date -
Aug 14, 2013
filing date -
May 3, 2013
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Abstract
A semiconductor structure for electromagnetic induction sensing and a method for manufacturing the same are provided: forming the Hall sensor in a first semiconductor fabrication; forming the passivation layer above the Hall sensor to cover the Hall sensor according to the first semiconductor fabrication; and forming the current-carrying layer above the passivation layer in a second semiconductor fabrication to form the semiconductor structure for electromagnetic induction sensing. The current-carrying layer carries the current to be sensed; and the Hall sensor senses the magnetic field generated. The Hall sensor generates a voltage or a current signal proportional to the strength of the current to be sensed.
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