SILICON CONTAINING COMPOUNDS FOR ALD DEPOSITION OF METAL SILICATE FILMS
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United States of America Patent
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Issued Date -
Oct 30, 2014
app pub date -
Jul 11, 2014
filing date -
Jan 19, 2012
priority date (Note) -
Abandoned
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Abstract
Disclosed are silicon containing compounds and their use in vapor deposition methods of hafnium silicate films having a desired silicon concentration. More particularly, deposition of hafnium silicate films by atomic layer deposition using moisture and the disclosed silicon containing compounds produce films having a desired silicon concentration.
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