THIN FILM FORMATION FOR DEVICE SENSITIVE TO ENVIRONMENT
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United States of America Patent
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Issued Date -
Oct 30, 2014
app pub date -
Apr 9, 2014
filing date -
Apr 25, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Embodiments relate to forming a barrier layer on a device before performing radical-assisted atomic layer deposition (RA-ALD) using ozone to form oxygen radicals that function as a reactant precursor for depositing a blanket deposition layer over the device. Before exposing the substrate to ozone or oxygen radicals generated from ozone or oxygen radicals with hydroxyl radicals (generated from ozone mixed with hydrogen-containing gas such as hydrogen or ammonia), the barrier layer is formed on the substrate by exposing the device formed on a substrate to radicals of nitrogen compound gas to prevent ozone, its radicals or oxygen radicals in combination with hydroxyl radicals from penetrating and damaging the device during the process of depositing the blanket deposition layer.
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