HIGH THROUGHPUT EPITAXIAL DEPOSITION SYSTEM FOR SINGLE CRYSTAL SOLAR DEVICES
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United States of America Patent
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Issued Date -
Oct 30, 2014
app pub date -
Mar 17, 2014
filing date -
Feb 25, 2009
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Abstract
An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration and the wafers may be mounted at a small angle to the plane of the wafer carrier plates, wherein the wafers are configured in pairs along the direction of gas flow and wherein along the direction of gas flow the angular mounting of the wafers provides a smaller gap between opposed wafer surfaces on said parallel wafer carrier plates in the center of said wafer sleeve than at the periphery of said wafer sleeve.
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