Nanometer standard prototype and method for manufacturing nanometer standard prototype
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United States of America Patent
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app pub date -
Nov 11, 2011
filing date -
Nov 11, 2011
priority date (Note) -
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status (Latency Note)
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Abstract
A standard sample (72) that is a nanometer standard prototype, having a standard length that serves as a length reference, includes a SiC layer in which a step-terrace structure is formed. The height of a step, used as the standard length, is equal to the height of a full unit that corresponds to one periodic of a stack of SiC molecules in a stack direction or equal to the height of a half unit that corresponds to one-half periodic of the stack of SiC molecules in the stack direction. In a microscope such as an STM to be measured in a high-temperature vacuum environment, heating in a vacuum furnace enables surface reconstruction with ordered atomic arrangement, while removing a natural oxide film from the surface, so that accuracy of the height of the step is not degraded. Accordingly, a standard sample usable under a high-temperature vacuum is achieved.
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International Classification(s)
- 2011 Application Filing Year
- H01L Class
- 19146 Applications Filed
- 15997 Patents Issued To-Date
- 83.56 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
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