METHOD FOR FABRICATING A SEMICONDUCTOR MEMORY
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United States of America Patent
Stats
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N/A
Issued Date -
Oct 16, 2014
app pub date -
Apr 10, 2014
filing date -
Apr 10, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for fabricating a semiconductor memory includes the following steps. Active areas are defined in a substrate. An oxide layer is then formed on the active areas. The oxide layer is subjected to a surface treatment. A first polysilicon layer, a buffer layer and a hard mask are deposited. Recessed access devices are formed in an array region of the substrate. After the recessed access devices are formed, the hard mask and the buffer layer are removed to thereby form transistors in a peripheral region. A second polysilicon layer is deposited on the first polysilicon layer. The first and second polysilicon layers are then etched into a gate structure.
First Claim
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