METHOD OF TESTING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR TESTING SYSTEM
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United States of America Patent
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Issued Date -
Oct 16, 2014
app pub date -
Jul 24, 2013
filing date -
Apr 10, 2013
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Abandoned
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Abstract
A method of testing semiconductor devices is provided includes: exposing one end of the device contact on the surface of the semiconductor; using a scanning probe microscopy apparatus to scan a diagnostic area on the semiconductor; applying a direct current bias between the conductive probe and a substrate of the semiconductor; directing a testing radiation at the diagnostic area to increase amount of free carriers in the device contacts and in the semiconductor layer under the device contacts; and detecting the current flowing through the conductive probe and the substrate, wherein a defect current signal is measured when the probe is in contact with a defective device contact and a normal current signal is measured when the probe is in contact with a normal device contact, wherein the testing radiation increases the current measured to increase the difference between the defect signal and the normal signal.
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