BACKSIDE NANOSCALE TEXTURING TO IMPROVE IR RESPONSE OF SILICON SOLAR CELLS AND PHOTODETECTORS
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United States of America Patent
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Issued Date -
Oct 16, 2014
app pub date -
Feb 6, 2014
filing date -
Dec 10, 2009
priority date (Note) -
Abandoned
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Abstract
The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing with diffusive scattering and with a smooth front surface of the solar cell results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.
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