METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON
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United States of America Patent
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Issued Date -
Oct 9, 2014
app pub date -
May 30, 2014
filing date -
Jul 8, 2011
priority date (Note) -
Abandoned
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Abstract
Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays
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