PROGRAMMABLE IMPEDANCE MEMORY ELEMENTS AND CORRESPONDING METHODS
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United States of America Patent
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Mar 3, 2014
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Mar 3, 2013
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Abstract
A memory element programmable between different impedance states can include a first electrode; a switching layer formed in contact with the first electrode and including at least one metal oxide; and a buffer layer in contact with the switching layer. A buffer layer can include a first metal, tellurium, a third element, and a second metal distributed within the buffer layer. A second electrode can be in contact with the buffer layer.
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