NONVOLATILE MEMORY CELL STRUCTURE AND METHOD FOR PROGRAMMING AND READING THE SAME
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United States of America Patent
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Issued Date -
Oct 2, 2014
app pub date -
Feb 10, 2014
filing date -
Mar 28, 2013
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Abstract
A nonvolatile memory cell structure includes a doping well disposed in a substrate, an antifuse gate disposed on the doping well, a drain disposed in the substrate, an optional select gate disposed on the doping well and an optional shallow trench isolation disposed inside the doping well.
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