SEMICONDUCTOR STRUCTURE HAVING BURIED WORD LINE AND METHOD OF MANUFACTURING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 2, 2014
app pub date -
Jun 18, 2013
filing date -
Apr 1, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A semiconductor structure having buried word line formed in a trench in a semiconductor substrate includes a gate oxide layer, a gate conductor, a gate cap layer, a blocking layer, and an isolation structure. The gate oxide layer is formed on the inner surface of the trench, the gate conductor is formed in the trench, and the gate cap layer is formed on the gate conductor. The blocking layer surrounds a bottom portion of the gate conductor, and the bottom portion of the gate conductor is isolated from the gate oxide layer by the blocking layer. The isolation structure surrounds a top portion of the gate conductor and in contact with the top end of the blocking layer. The top portion of the gate conductor is isolated from the gate oxide layer and the from the gate cap layer by the isolation structure.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully