PHASE NOISE REDUCTION IN TRANSISTOR DEVICES
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United States of America Patent
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Issued Date -
Oct 2, 2014
app pub date -
Mar 24, 2014
filing date -
Mar 28, 2013
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Abandoned
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Abstract
Semiconductor devices are disclosed having modified transistor dimensions configured to provide reduced phase noise in certain amplifier applications. Transistor devices having expanded emitter-poly overlap of the emitter window, which serves to separate the external base area from the lateral emitter-base junction, may experience a reduction of free electrons and holes that diffuse into the electric field of the emitter-base junction, thereby reducing phase noise.
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