METHOD OF MANUFACTURING SINGLE CRYTSAL INGOT, AND SINGLE CRYSTAL INGOT AND WAFER MANUFACTURED THEREBY
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United States of America Patent
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Issued Date -
Oct 2, 2014
app pub date -
Jul 3, 2012
filing date -
Jul 6, 2011
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Abandoned
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Abstract
Provided is a method of evaluating quality of a wafer or a single crystal ingot and a method of controlling quality of a single crystal ingot by using the same. The method of evaluating quality of a wafer or a single crystal ingot according to an embodiment may include performing Cu (copper) haze evaluation on a wafer or a slice of a single crystal ingot and Cu haze scoring with respect to the result of the Cu haze evaluation.
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