Resistance change memory
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United States of America Patent
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Aug 22, 2017
Grant Date -
Sep 25, 2014
app pub date -
Sep 4, 2013
filing date -
Mar 22, 2013
priority date (Note) -
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Abstract
According to one embodiment, a memory includes a memory cell array including blocks arranged in a column direction, first and second main global conductive lines each extending from a first end to a second end of the memory cell array in the column direction, a first resistance change element connected between the first and second main global conductive lines inside the memory cell array, a first reference global conductive line extending from the first end to the second end of the memory cell array in the column direction, and a second resistance change element connected to the reference global conductive line outside the memory cell array.
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