SEMICONDUCTOR DEVICE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Sep 25, 2014
app pub date -
Jul 10, 2013
filing date -
Mar 22, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
According to one embodiment, there is provided a semiconductor device including a first capacitance electrode, a second capacitance electrode, and a depletion layer. The first capacitance electrode is buried in a hole via an insulating film. The hole is formed in a semiconductor substrate. The second capacitance electrode is formed on a front surface side or on a back surface side of the semiconductor substrate so as to be separated from the first capacitance electrode. The depletion layer forming mechanism includes a control electrode, and forms a depletion layer between the first capacitance electrode and the second capacitance electrode.
First Claim
Other Claims data not available