SEMICONDUCTOR ON INSULATOR STRUCTURE WITH IMPROVED ELECTRICAL CHARACTERISTICS
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United States of America Patent
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app pub date -
Nov 13, 2012
filing date -
Dec 5, 2011
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Abstract
A semiconductor structure comprising a first semiconductor layer, a bulk semiconductor layer, an insulation layer between the first semiconductor layer and the bulk semiconductor layer, a first implanted region that is at least partially within the insulation layer; and a second doped region that is at least partially within the bulk semiconductor layer, wherein the first implanted region has an implant profile that shows a maximum within the insulation layer and a tail extending within the bulk semiconductor layer so as to inhibit the diffusion of a second doping material of the second doped region within the insulation layer.
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