LIGHT-EMITTING DEVICE
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United States of America Patent
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Issued Date -
Sep 25, 2014
app pub date -
Mar 20, 2014
filing date -
Mar 21, 2013
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Abandoned
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Abstract
A light-emitting device including a GaN-based semiconductor has a structure in which sequentially deposited are an n-type semiconductor layer, a superlattice structure layer including at least one InGaN superlattice layer, an active layer, an AlGaN-based semiconductor layer, and a p-type semiconductor layer. A concavo-convex structure is formed on the interface of the AlGaN-based semiconductor layer with the p-type semiconductor layer. The active layer is an InGaN layer or an InGaN quantum well layer. The InGaN superlattice layer has an In composition that is greater than that of the active layer.
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