METHOD OF FORMING SINGLE SIDE TEXTURED SEMICONDUCTOR WORKPIECES
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United States of America Patent
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Issued Date -
Sep 18, 2014
app pub date -
Mar 12, 2013
filing date -
Mar 12, 2013
priority date (Note) -
Abandoned
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Abstract
Methods of creating a workpiece having a smooth side and a textured side are disclosed. In some embodiments, a first side of a workpiece is doped, using ion implantation or diffusion, to create a doped layer. This doped layer of the first side may be more resistant to chemical treatment than the second side of the workpiece. This allows the second side of the workpiece to be textured without capping or otherwise protecting the doped first side, even though the doped layer of the first side physically contacts the chemical treatment. In some embodiments, a p-type dopant is used to create the doped layer. In some embodiments, the workpiece is processed to form a solar cell.
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