COMPLEMENTARY METAL OXIDE OR METAL NITRIDE HETEROJUNCTION MEMORY DEVICES WITH ASYMMETRIC HYSTERESIS PROPERTY
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United States of America Patent
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Issued Date -
Sep 18, 2014
app pub date -
Mar 14, 2014
filing date -
Mar 15, 2013
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Abstract
A resistive memory device is disclosed. The resistive memory device comprises one or more metal oxide layers. The resistive memory device displays a property of asymmetric hysteresis loop formation when positive and negative electrical biases are applied across the device.
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