Micromachined High Breakdown Voltage ESD Protection Device for Light Emitting Diode and Method of Making the Same
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United States of America Patent
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Issued Date -
Sep 18, 2014
app pub date -
Mar 12, 2013
filing date -
Mar 12, 2013
priority date (Note) -
Abandoned
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Abstract
This invention relates to a micromachined ESD protection device and its microfabrication method for light emitting diode (LEDs) chips. The LEDs is coupled to the ESD protection device in a shunt connection to absorb and eliminate the electrostatic charges induced by human contact or other voltage spike sources. The ESD protection circuit can prevent the LED from burning down and extend its lifespan. By using a thick polyimide layer as the dielectric film for capacitors in the micromachined ESD protection device at the current invention has the advantages with high breakdown voltage compared to other ESD protection circuits. And furthermore, the device in the current invention is easy for mass production with low manufacturing cost. Another embodiment of the present invention is that the multiple-array arrangement in current micromachined ESD protection device could greatly enhance the liability due to multiple-protection and thus to provide the possibility of multiple-times usage.
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