Importance

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Abstract

A spacer transfer process produces sub-lithographic patterns of conductive lines in a semiconductor die. A dielectric then a conductive material are deposited onto a face of a semiconductor substrate. A sacrificial dielectric is deposited on the conductive material and portions thereof are removed to form at least one trench comprising walls and a bottom exposing the conductive material. A hard mask is deposited over the sacrificial dielectric including the walls and bottom of the trench. Then the hard mask is removed therefrom except from the walls of the trench. Thereafter, the remaining sacrificial dielectric is removed leaving only the hard mask from the walls of the trench. Then all conductive material not protected by the remaining hard mask is removed. Thereafter, the hard mask is removed exposing a sub-lithographic pattern of fence conductors wherein portions thereof are removed at appropriate locations to produce desired conductor patterns comprising isolated fence conductors.

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First Claim