Manufacture of wafers of wide energy gap semiconductor material for the integration of electronic and/or optical and/or optoelectronic devices
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United States of America Patent
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Issued Date -
Sep 18, 2014
app pub date -
Jul 25, 2012
filing date -
Jul 28, 2011
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Abandoned
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Abstract
A method is provided for fabricating a wafer of semiconductor material intended for use for the integration of electronic and/or optical and/or optoelectronic devices. The method comprises: providing a starting wafer of crystalline silicon (205); on the starting wafer of crystalline silicon, epitaxially growing a buffer layer (210) consisting of a sub-stoichiometric alloy of silicon and germanium; epitaxially growing on the buffer layer a layer (225) of a semiconductor material having an energy gap greater than that of the crystalline silicon constituting the starting wafer, wherein the layer of semiconductor material having an energy gap greater than that of the crystalline silicon is grown so to have a thickness capable of constituting a substrate for the integration therein of electronic and/or optical and/or optoelectronic devices.
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