FERROELECTRIC MEMORY DEVICE
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United States of America Patent
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Issued Date -
Sep 18, 2014
app pub date -
Mar 18, 2013
filing date -
Mar 18, 2013
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Abstract
A ferroelectric memory device includes a memory layer, made of a silicon-based ferroelectric memory material. The silicon-based ferroelectric memory material includes a mesoporous silica film with nanopores and atomic polar structures on inner walls of the nanopores. The atomic polar structures are formed by asymmetrically bonding metal ions to silicon-oxygen atoms on the inner walls, and the silicon-based ferroelectric memory material includes semiconductor quantum dots, metal quantum dots and metal-semiconductor alloy quantum dots.
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