DISTURB-RESISTANT NON-VOLATILE MEMORY DEVICE AND METHOD
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United States of America Patent
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Dec 17, 2013
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Aug 23, 2010
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Abstract
A disturb-resistant nonvolatile memory device includes a substrate, a dielectric material overlying the semiconductor substrate, a first cell comprising a first wiring structure extending in a first direction overlying the dielectric material, a first contact region, a first resistive switching media, and a second wiring structure extending in a second direction orthogonal to the first direction, a second cell comprising the first wiring structure, a second contact region, a second resistive switching media, and a third wiring structure separated from the second wiring structure and parallel to the second wiring structure, and a dielectric material disposed at least in a region between the first switching region and the second switching region to electrically and physically isolate the first switching region and the second switching region.
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