THIN FILM SOLAR CELL AND FABRICATION METHOD THEREFOR
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United States of America Patent
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N/A
Issued Date -
Sep 18, 2014
app pub date -
Jan 27, 2014
filing date -
Mar 12, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method is disclosed for manufacturing an absorber layer, such as a CIS-based absorber layer, in a thin film solar cell, such as a CIS-based thin film solar cell. One method includes a selenization step, an annealing step, and a sulfuration step. Another method includes an annealing step and a sulfuration step. Additionally, a disclosed CIS-based absorber layer has a surface-to-bottom ratio of gallium which is greater than that for a conventional absorber layer and the ratio of sulfur to sulfur-plus-selenium is less than that for a conventional absorber layer. Also provided is a process for producing an absorber layer, such as a CIS-based absorber layer, over a large area where the layer is capable of achieving both a high open circuit voltage and a high fill factor by preferable depth composition profile through controllable gallium-diffusion/sulfur-incorporation and the enlarged grain size.
First Claim
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