STACK CAPACITOR STRUCTURE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Sep 11, 2014
app pub date -
Sep 13, 2013
filing date -
Mar 11, 2013
priority date (Note) -
Abandoned
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Abstract
The present invention provides a stack capacitor structure and a manufacturing method thereof, adapted for a random access memory. The stack capacitor structure is formed on a semiconductor substrate. The stack capacitor structure includes an oxide layer and a circular-shaped stopping layer. The oxide layer is disposed on the semiconductor substrate. The oxide layer has a capacitor trench therein. The circular-shaped stopping layer surrounds an edge of an opening of the capacitor trench. The disclosed stack capacitor structure and the manufacturing method thereof may thereby prevent the occurrence of the stack capacitor structure from having CD variation and belly region causing cell to cell leakage as result of manufacturing process limitation.
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