Method for Forming Semiconductor Device
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United States of America Patent
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Issued Date -
Aug 28, 2014
app pub date -
Dec 26, 2013
filing date -
Feb 25, 2013
priority date (Note) -
Abandoned
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Abstract
A method for forming a semiconductor device is provided, which may include: providing an interlayer dielectric layer, a metal layer formed on the interlayer dielectric layer, an etch stop layer formed on the metal layer, and a first opening extending through the etch stop layer and the metal layer, wherein the interlayer dielectric layer is exposed from the first opening; forming a protecting layer on the sidewall of the first opening to cover the metal layer; after forming the protecting layer, forming a second opening by etching a portion of the interlayer dielectric layer; and forming an isolating layer by filling up the second opening, wherein the isolating layer includes an air gap. The semiconductor device is more stable in performance.
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