I-LINE PHOTORESIST COMPOSITION AND METHOD FOR FORMING FINE PATTERN USING SAME
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United States of America Patent
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Issued Date -
Aug 28, 2014
app pub date -
Sep 21, 2012
filing date -
Sep 22, 2011
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Abandoned
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Abstract
An I-line photoresist composition, having excellent thermal stability at high temperature of 200-250° C., by which fine photoresist patterns form using an acid diffusion layer and a method for forming a fine pattern using the same, comprising: a polymer containing 1-99 mol % of repeating unit selected from a group consisting of 1-99 mol % of repeating unit represented by Formula 1, repeating unit represented by Formula 2, repeating unit represented by Formula 3 and mixture thereof; a photo active compound containing at least two diazonaphtoquinone (DNQ) groups; and an organic solvent. Formulas 1-3 are located in the specification. R* and R** are independently a hydrogen atom or a methyl group. R1 is a hydrogen atom or linear, branch or cyclic hydrocarbonyl group of 3-15 carbon atoms, containing or not containing 1-4 oxygen atoms. R2 is linear, branch or cyclic hydrocarbonyl group of 1-30 carbon atoms, containing or not containing 1-4 oxygen atoms.
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