METAL-OXIDE SEMICONDUCTOR THIN FILM TRANSISTORS AND METHODS OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Aug 28, 2014
app pub date -
Oct 24, 2013
filing date -
Feb 27, 2013
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Abandoned
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Abstract
According to example embodiments a TFT includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a channel layer on the gate insulating layer, the channel layer including an indium-rich metal-oxide layer; a first electrode on one end of the channel layer; a second electrode on the other end of the channel layer; and a passivation layer on the channel layer between the first and second electrodes.
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