ON-TRACK REVERSE LITHOGRAPHY TO THIN MASK FOR FABRICATION OF DARK-FIELD FEATURES
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United States of America Patent
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Issued Date -
Aug 14, 2014
app pub date -
Feb 12, 2013
filing date -
Feb 12, 2013
priority date (Note) -
Abandoned
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Abstract
A reversal lithography approach is disclosed in which dark-field features are created on microelectronic substrates using bright-field lithography processes and a pattern reversal method. A wafer stack having a patterned imaging layer is provided that has a plurality of features formed thereon. A pattern reversal composition is applied to the patterned imaging layer overcoating the features, followed by wet etch-back of partially cured portions of the composition to expose the tops of the features. The imaging layer is then removed resulting in reversal of the pattern into the pattern reversal composition. This reversed pattern is then transferred into subsequent layers
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