SUBSTRATE HAVING A CHARGED ZONE IN AN INSULATING BURIED LAYER

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United States of America Patent

SERIAL NO

14253690

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Abstract

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A substrate comprises a base wafer, an insulating layer over the base wafer, and a top semiconductor layer over the insulating layer on a side thereof opposite the base wafer. The insulating layer comprises a charge-confining layer confined on one or both sides with diffusion barrier layers, wherein the charge-confining layer has a density of charges in absolute value higher than 1010 charges/cm2. Alternatively, the insulating layer comprises charge-trapping islands embedded therein, wherein the charge-trapping islands have a total density of charges in absolute value higher than 1010 charges/cm2.

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Patent Owner(s)

Patent OwnerAddress
SOITECPARC TECHNOLOGIQUE DES FONTAINES CHEMIN DES FRANQUES BERNIN 38190

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Allibert, Frederic Grenoble, FR 19 109
Gaudin, Gweltaz Grenoble, FR 35 221
Lallement, Fabrice Grenoble, FR 10 55
Landru, Didier Champ Pres Froges, FR 72 782
Landry, Karine Grenoble, FR 5 30
Mazure, Carlos Bernin, FR 63 1128
Shaheen, Mohamad A Portland, US 30 588

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