DIRECT DETECTORS FOR IONIZING RADIATIONS, AND METHODS FOR PRODUCING SUCH DETECTORS
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United States of America Patent
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Aug 14, 2014
app pub date -
Aug 2, 2011
filing date -
Aug 2, 2011
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Abstract
The present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided with a detector based on, or somehow incorporating, the above detectors.
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