RESISTIVE SWITCHING DEVICE FOR A NON-VOLATILE MEMORY DEVICE
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United States of America Patent
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app pub date -
Apr 15, 2014
filing date -
Oct 27, 2010
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Abandoned
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Abstract
A method for forming a non-volatile memory device configured with a resistive switching element includes providing a substrate having a surface region, depositing a first dielectric material overlying the surface region, forming a first wiring structure overlying the first dielectric material, forming a contact layer of doped polycrystalline silicon containing material overlying the first wiring structure, forming a switching layer of resistive switching material over the contact layer, removing native oxide formed on a top surface of the switching layer, if any, depositing a metal layer of an active metal directly upon the top surface of the switching layer, and depositing a second wiring structure overlying the metal layer, wherein the top surface of the switching layer is cleaned of the native oxide, if any, to reduce agglomeration of the active metal.
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